Invention Grant
- Patent Title: Vertical cavity surface emitting laser
- Patent Title (中): 垂直腔表面发射激光
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Application No.: US11427003Application Date: 2006-06-28
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Publication No.: US08385381B2Publication Date: 2013-02-26
- Inventor: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
- Applicant: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Yuji Masui
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JPP2005-195090 20050704; JPP2005-372099 20051226; JPP2006-159719 20060608
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.
Public/Granted literature
- US20070014324A1 VERTICAL CAVITY SURFACE EMITTING LASER Public/Granted day:2007-01-18
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