Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US13198443Application Date: 2011-08-04
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Publication No.: US08385377B2Publication Date: 2013-02-26
- Inventor: Kazuhiro Soejima , Takuya Nagai , Toru Yoshida
- Applicant: Kazuhiro Soejima , Takuya Nagai , Toru Yoshida
- Applicant Address: JP Tokyo
- Assignee: Alps Electric Co., Ltd.
- Current Assignee: Alps Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2010-174973 20100804
- Main IPC: H01S3/10
- IPC: H01S3/10 ; G02B26/02

Abstract:
A semiconductor laser device includes a semiconductor laser element configured to emit a fundamental wave; a transducer configured to receive the fundamental wave incident thereon and convert a wavelength of the fundamental wave to emit wavelength converted light; a filter configured to selectively transmit wavelength range light having a desired wavelength range of the wavelength converted light; a sealing member including a light-transmitting member and configured to enclose the semiconductor laser element, the light-transmitting member being configured to receive the wavelength range light transmitted through the filter and incident on the light-transmitting member, specularly reflect part of the wavelength range light, and substantially transmit the remaining part of the wavelength range light; and a photoreceptor configured to receive the specularly reflected light from the light-transmitting member.
Public/Granted literature
- US20120033700A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2012-02-09
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