Invention Grant
US08385146B2 Memory throughput increase via fine granularity of precharge management
有权
内存吞吐量通过预充电管理的细粒度增加
- Patent Title: Memory throughput increase via fine granularity of precharge management
- Patent Title (中): 内存吞吐量通过预充电管理的细粒度增加
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Application No.: US13412930Application Date: 2012-03-06
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Publication No.: US08385146B2Publication Date: 2013-02-26
- Inventor: Kuljit S. Bains , John B. Halbert
- Applicant: Kuljit S. Bains , John B. Halbert
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Caven & Aghevli LLC
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Methods and apparatus to improve throughput in memory devices are described. In one embodiment, memory throughput is increased via fine granularity of precharge management. In an embodiment, three separate precharge timings may be used, e.g., optimized per memory bank, per memory bank group, and/or per a memory device. Other embodiments are also disclosed and claimed.
Public/Granted literature
- US20120314521A1 MEMORY THROUGHPUT INCREASE VIA FINE GRANULARITY OF PRECHARGE MANAGEMENT Public/Granted day:2012-12-13
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