Some embodiments of the present invention provide methods of programming memory devices that include an array of vertical channels passing through a stacked plurality of word plates, wherein respective columns of vertical channels are configured to be coupled to respective bit lines. In some method embodiments, potentials of the vertical channels are boosted, followed by selectively applying respective data to vertical channels via the bit lines to thereby selectively change the potentials of the vertical channels according to the data. A program voltage is subsequently applied to a selected word plate to thereby program a plurality of cells.