Invention Grant
US08385121B2 Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell
有权
存储器，其适于将多个位编程到存储器单元并从存储器单元读取不同数量的位
- Patent Title: Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell
- Patent Title (中): 存储器，其适于将多个位编程到存储器单元并从存储器单元读取不同数量的位
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Application No.: US12948952Application Date: 2010-11-18
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Publication No.: US08385121B2Publication Date: 2013-02-26
- Inventor: Vishal Sarin , Jung-Sheng Hoei , Jonathan Pabustan , Frankie F. Roohparvar
- Applicant: Vishal Sarin , Jung-Sheng Hoei , Jonathan Pabustan , Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A memory has a memory array with a memory cell. The memory is adapted to program a first number of bits into the memory cell. The memory is adapted to sense a second number of bits, different from the first number of bits, from the memory cell.
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