Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unselected transistor string connected to the neighboring word line and a second, unselected transistor of the unselected transistor string connected to the selected word line, the first, unselected transistor neighboring the second, unselected transistor in the unselected transistor string.