Invention Grant
- Patent Title: Differential magnetic random access memory (MRAM)
- Patent Title (中): 差分磁随机存取存储器（MRAM）
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Application No.: US13429293Application Date: 2012-03-23
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Publication No.: US08385108B1Publication Date: 2013-02-26
- Inventor: Ebrahim Abedifard , Siamack Nemazie , Parviz Keshtbod
- Applicant: Ebrahim Abedifard , Siamack Nemazie , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of method of writing to a magnetic memory cell includes selecting a magnetic memory cell of a magnetic memory array to be written to, the magnetic memory cell including a pair of MTJs, and setting a bit line (BL) coupled to the magnetic memory cell to a state that causes current to flow through the pair of MTJs in a manner that causes the direction of current flow through one of the MTJs of the pair of MTJs to be in a direction opposite to that of the other MTJ of the pair of MTJs.
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