Invention Grant
US08385025B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer
有权
电流垂直于平面（CPP）磁阻（MR）传感器，具有改进的用于硬偏置层的种子层结构
- Patent Title: Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer
- Patent Title (中): 电流垂直于平面（CPP）磁阻（MR）传感器，具有改进的用于硬偏置层的种子层结构
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Application No.: US12969466Application Date: 2010-12-15
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Publication No.: US08385025B2Publication Date: 2013-02-26
- Inventor: Stefan Maat , Alexander M. Zeltser
- Applicant: Stefan Maat , Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
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