Invention Grant
US08384980B2 Semiconductor optical modulation device, Mach-Zehnder interferometer type semiconductor optical modulator, and method for producing semiconductor optical modulation device
有权
半导体光调制装置，马赫 - 策德尔干涉仪型半导体光调制器以及半导体光调制装置的制造方法
- Patent Title: Semiconductor optical modulation device, Mach-Zehnder interferometer type semiconductor optical modulator, and method for producing semiconductor optical modulation device
- Patent Title (中): 半导体光调制装置，马赫 - 策德尔干涉仪型半导体光调制器以及半导体光调制装置的制造方法
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Application No.: US13187781Application Date: 2011-07-21
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Publication No.: US08384980B2Publication Date: 2013-02-26
- Inventor: Chie Fukuda
- Applicant: Chie Fukuda
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2010-176446 20100805
- Main IPC: G02F1/03
- IPC: G02F1/03
Abstract:
A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer.
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