Invention Grant
US08384507B2 Through via inductor or transformer in a high-resistance substrate with programmability
有权
通过电感或变压器在高电阻基板上具有可编程性
- Patent Title: Through via inductor or transformer in a high-resistance substrate with programmability
- Patent Title (中): 通过电感或变压器在高电阻基板上具有可编程性
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Application No.: US12791023Application Date: 2010-06-01
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Publication No.: US08384507B2Publication Date: 2013-02-26
- Inventor: Xia Li , Jonghae Kim , Chi Shun Lo
- Applicant: Xia Li , Jonghae Kim , Chi Shun Lo
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
A through via inductor or transformer in a high-resistance substrate in an electronic package. In one embodiment, the package comprises a target inductor which includes a through-via formed in the substrate through which a signal passes and a tuner inductor which includes a through-via formed in the substrate such that the through-via has an independent signal passing therethrough. The direction of the signal passing through the tuner inductor can be independently controlled to adjust the total inductance of the target inductor. In another embodiment, a transformer can comprise a primary loop and a secondary loop, each of which includes a plurality of through-vias that are coupled to a plurality of conductive traces. The primary loop forms a first continuous conductive path and the secondary loop forms a second continuous conductive path. A signal passing through the primary loop can induce a signal in the secondary loop such that the induced signal is dependent on the transformer ratio.
Public/Granted literature
- US20110291786A1 Through Via Inductor Or Transformer In A High-Resistance Substrate With Programmability Public/Granted day:2011-12-01
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