Invention Grant
- Patent Title: Through wafer vias and method of making same
- Patent Title (中): 通过晶圆通孔及其制作方法
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Application No.: US12188241Application Date: 2008-08-08
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Publication No.: US08384224B2Publication Date: 2013-02-26
- Inventor: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard Kotulak
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The structure includes, a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of to the bottom surface of the substrate, the at least one electrically conductive via electrically isolated from the substrate.
Public/Granted literature
- US20100032811A1 THROUGH WAFER VIAS AND METHOD OF MAKING SAME Public/Granted day:2010-02-11
Information query
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