Invention Grant
- Patent Title: Semiconductor device and method of manufacturing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12883221Application Date: 2010-09-16
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Publication No.: US08384177B2Publication Date: 2013-02-26
- Inventor: Nobuyuki Endo
- Applicant: Nobuyuki Endo
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-239867 20091016
- Main IPC: H01L31/04
- IPC: H01L31/04
Abstract:
A semiconductor device has an active region formed on a semiconductor substrate, a trench-type element isolation region formed on the semiconductor substrate, and a diffusion region in which fluorine is diffused that surrounds the element isolation region and is formed on the semiconductor substrate so as not to contact the active region.
Public/Granted literature
- US20110089513A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-04-21
Information query
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