Invention Grant
US08384161B2 Contact optimization for enhancing stress transfer in closely spaced transistors
有权
接触优化用于增强紧密间隔晶体管中的应力传递
- Patent Title: Contact optimization for enhancing stress transfer in closely spaced transistors
- Patent Title (中): 接触优化用于增强紧密间隔晶体管中的应力传递
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Application No.: US12823438Application Date: 2010-06-25
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Publication No.: US08384161B2Publication Date: 2013-02-26
- Inventor: Ralf Richter , Kai Frohberg , Holger Schuehrer
- Applicant: Ralf Richter , Kai Frohberg , Holger Schuehrer
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009031111 20090630
- Main IPC: H01L27/092
- IPC: H01L27/092
Abstract:
By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in the P-channel transistor may be reduced.
Public/Granted literature
- US20100327367A1 CONTACT OPTIMIZATION FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS Public/Granted day:2010-12-30
Information query
IPC分类:
