Provided is a semiconductor light emitting device. The semiconductor light emitting device includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; an insulation layer on the second conductive semiconductor layer and including a first hole therein; a second electrode on the second conductive semiconductor layer; and a first electrode on the insulation layer and including a connection portion electrically connected to the first conductive semiconductor layer. The second electrode includes a plurality of line patterns. The connection portion of the first electrode is disposed between the plurality of line patterns of the second electrode and is disposed in the first hole of the insulation layer.