Invention Grant
US08382939B2 Plasma processing chamber with enhanced gas delivery 有权
等离子处理室具有增强的气体输送

Plasma processing chamber with enhanced gas delivery
Abstract:
A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.
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