Invention Grant
- Patent Title: Radio frequency IC device and method of manufacturing the same
- Patent Title (中): 射频IC器件及其制造方法
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Application No.: US13308575Application Date: 2011-12-01
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Publication No.: US08381997B2Publication Date: 2013-02-26
- Inventor: Makoto Osamura , Kenji Kubota , Noboru Kato
- Applicant: Makoto Osamura , Kenji Kubota , Noboru Kato
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2009-134117 20090603
- Main IPC: G06K19/067
- IPC: G06K19/067

Abstract:
A radio frequency IC device that prevents variations in the value of capacitive coupling between a radio frequency IC element and a radiation electrode and has good signal transmission efficiency includes a radio frequency IC element including input/output electrodes and, a first base including intermediate electrodes that are capacitively coupled to the input/output electrodes and have capacitance values C1a and C1b, respectively, and a second base including radiation electrodes and that are capacitively coupled to the intermediate electrodes and have capacitance values C2a and C2b, respectively. A capacitance C1 obtained by combining C1a and C1b is smaller than a capacitance C2 obtained by combining C2a and C2b.
Public/Granted literature
- US20120074229A1 RADIO FREQUENCY IC DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-29
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