Invention Grant
US08381378B2 Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation
有权
形成其中具有高密度沟槽阵列的微机械谐振器的方法,其提供无源温度补偿
- Patent Title: Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation
- Patent Title (中): 形成其中具有高密度沟槽阵列的微机械谐振器的方法,其提供无源温度补偿
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Application No.: US12794361Application Date: 2010-06-04
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Publication No.: US08381378B2Publication Date: 2013-02-26
- Inventor: Farrokh Ayazi , Roozbeh Tabrizian , Giorgio Casinovi
- Applicant: Farrokh Ayazi , Roozbeh Tabrizian , Giorgio Casinovi
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H04R17/00

Abstract:
A method of forming a micromechanical resonator includes forming a resonator body anchored to a substrate by at least a first anchor. This resonator body may include a semiconductor or other first material having a negative temperature coefficient of elasticity (TCE). A two-dimensional array of spaced-apart trenches are provided in the resonator body. These trenches may be filled with an electrically insulating or other second material having a positive TCE. The array of trenches may extend uniformly across the resonator body, including regions in the body that have relatively high and low mechanical stress during resonance. This two-dimensional array (or network) of trenches can be modeled as a network of mass-spring systems with springs in parallel and/or in series with respect to a direction of a traveling acoustic wave within the resonator body during resonance.
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