Invention Grant
- Patent Title: Methods for programming a memory device and memory devices
-
Application No.: US13039778Application Date: 2011-03-03
-
Publication No.: US08369157B2Publication Date: 2013-02-05
- Inventor: Violante Moschiano , Giovanni Santin
- Applicant: Violante Moschiano , Giovanni Santin
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
Methods for programming memory cells and memory devices are disclosed. One such method for programming includes performing a program verify operation of a group of memory cells. A number of potential CS2 situations are detected. If the number of detected potential CS2 situations is greater than a threshold, programming compensation for a CS2 situation is used in a subsequent programming operation.
Public/Granted literature
- US20120224429A1 METHODS FOR PROGRAMMING A MEMORY DEVICE AND MEMORY DEVICES Public/Granted day:2012-09-06
Information query
