Invention Grant
- Patent Title: Non-volatile multilevel memory cell programming
- Patent Title (中): 非易失性多层存储器单元编程
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Application No.: US12726525Application Date: 2010-03-18
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Publication No.: US08369147B2Publication Date: 2013-02-05
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04
Abstract:
The present disclosure includes methods, devices, modules, and systems for programming multilevel non-volatile memory cells, each cell having a number of lower pages and an upper page. One method includes programming a first lower page, programming a second lower page, programming a third lower page, programming an upper page, and reprogramming the upper page of a cell.
Public/Granted literature
- US20100182832A1 NON-VOLATILE MULTILEVEL MEMORY CELL PROGRAMMING Public/Granted day:2010-07-22
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