Invention Grant
US08369145B2 Apparatus and method for detecting over-programming condition in multistate memory device 失效
多状态存储器件中过度编程条件的检测装置及方法

Apparatus and method for detecting over-programming condition in multistate memory device
Abstract:
A system embodiment comprises a nonvolatile memory device, a memory, and a controller. The nonvolatile memory device includes a plurality of nonvolatile memory cells. Each nonvolatile memory cell is adapted to store at least two bits. The memory is adapted to store a program when the system powers up. The controller is adapted to implement the program to provide instructions used to program and erase nonvolatile memory cells. A method embodiment comprises loading a program into memory upon powering up a memory system, and implementing the program using a controller, including programming and erasing multi-bit nonvolatile memory cells.
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