Invention Grant
US08369145B2 Apparatus and method for detecting over-programming condition in multistate memory device
失效
多状态存储器件中过度编程条件的检测装置及方法
- Patent Title: Apparatus and method for detecting over-programming condition in multistate memory device
- Patent Title (中): 多状态存储器件中过度编程条件的检测装置及方法
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Application No.: US13410771Application Date: 2012-03-02
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Publication No.: US08369145B2Publication Date: 2013-02-05
- Inventor: Robert D. Norman , Christophe J. Chevallier
- Applicant: Robert D. Norman , Christophe J. Chevallier
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A system embodiment comprises a nonvolatile memory device, a memory, and a controller. The nonvolatile memory device includes a plurality of nonvolatile memory cells. Each nonvolatile memory cell is adapted to store at least two bits. The memory is adapted to store a program when the system powers up. The controller is adapted to implement the program to provide instructions used to program and erase nonvolatile memory cells. A method embodiment comprises loading a program into memory upon powering up a memory system, and implementing the program using a controller, including programming and erasing multi-bit nonvolatile memory cells.
Public/Granted literature
- US20120192018A1 APPARATUS AND METHOD FOR DETECTING OVER-PROGRAMMING CONDITION IN MULTISTATE MEMORY DEVICE Public/Granted day:2012-07-26
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