According to one embodiment, a semiconductor memory device includes a variable resistance element configured to store data “0” and data “1” in accordance with a change in resistance value, a current generator configured to generate a reference current for determining data of the variable resistance element, and having an admittance middle between an admittance of a variable resistance element storing data “0” and an admittance of a variable resistance element storing data “1”, and a sense amplifier includes a first input terminal connected to the variable resistance element and a second input terminal connected to the current generator, and configured to compare currents of the first input terminal and the second input terminal.