Invention Grant
- Patent Title: Semiconductor integrated circuit device and method for controlling power supply voltage
- Patent Title (中): 半导体集成电路装置及控制电源电压的方法
-
Application No.: US12923342Application Date: 2010-09-15
-
Publication No.: US08368457B2Publication Date: 2013-02-05
- Inventor: Yoshifumi Ikenaga
- Applicant: Yoshifumi Ikenaga
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-217168 20090918
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
The present invention is a semiconductor integrated circuit device including a target circuit, a voltage supply circuit that supplies the power supply voltage to the target circuit, a control circuit that controls an output voltage of the voltage supply circuit, and a target voltage prediction circuit that predicts a voltage value of the power supply voltage. The control circuit changes the output voltage of the voltage supply circuit by a predetermined voltage value. The target voltage prediction circuit detects a change amount of an operating frequency of the target circuit along with the change of the predetermined voltage value, and calculates a target voltage value based on a relation between the change amount of the operating frequency and the predetermined voltage value. The voltage supply circuit supplies a power supply voltage corresponding to the target voltage value to the target circuit.
Public/Granted literature
- US20110068855A1 Semiconductor integrated circuit device and method for controlling power supply voltage Public/Granted day:2011-03-24
Information query