Invention Grant
- Patent Title: Electron emission apparatus and method for making the same
- Patent Title (中): 电子发射装置及其制造方法
-
Application No.: US13081336Application Date: 2011-04-06
-
Publication No.: US08368296B2Publication Date: 2013-02-05
- Inventor: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN200810066050 20080201
- Main IPC: H01J1/304
- IPC: H01J1/304

Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the grid, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips.
Public/Granted literature
- US20110181171A1 ELECTRON EMISSION APPARATUS AND METHOD FOR MAKING THE SAME Public/Granted day:2011-07-28
Information query