Invention Grant
- Patent Title: Elelctron emitter and electron emission element
- Patent Title (中): Elelctron发射极和电子发射元件
-
Application No.: US12981580Application Date: 2010-12-30
-
Publication No.: US08368295B2Publication Date: 2013-02-05
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04
Abstract:
The present disclosure provides an electron emitter. The electron emitter includes a carbon nanotube linear compound. The carbon nanotube linear compound includes a conductive linear support and a carbon nanotube pipe. The conductive linear support is located in the carbon nanotube pipe. A plurality of carbon nanotube peaks extends from one end of the electron emitter.
Public/Granted literature
- US20120133267A1 ELELCTRON EMITTER AND ELECTRON EMISSION ELEMENT Public/Granted day:2012-05-31
Information query
