Invention Grant
- Patent Title: Pressure-contact power semiconductor module and method for producing the same
- Patent Title (中): 压接式功率半导体模块及其制造方法
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Application No.: US12080624Application Date: 2008-04-04
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Publication No.: US08368207B2Publication Date: 2013-02-05
- Inventor: Jürgen Steger , Frank Ebersberger
- Applicant: Jürgen Steger , Frank Ebersberger
- Applicant Address: DE Nürnberg
- Assignee: Semikron Elektronik GmbH & Co., KG
- Current Assignee: Semikron Elektronik GmbH & Co., KG
- Current Assignee Address: DE Nürnberg
- Agency: The Law Offices of Roger S. Thompson
- Priority: DE102007016222 20070404
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/12 ; H01L23/10 ; H01L23/34

Abstract:
A pressure-contact power semiconductor module is arranged on a heat sink. The power semiconductor module is used with at least one substrate provided with conductor tracks and power semiconductor components. The module has a mounting body, on the underside of which the at least one substrate is arranged, and which is formed with cutouts. The module also includes a load connection element which is provided with contact feet that project away from strip sections and make pressure contact with the conductor tracks. The power semiconductor module additionally has a dimensionally stable cover, which covers the mounting body on all sides and is connected to the mounting body by means of snap-action latching connections. At least one pad element is restrained between the cover and the strip sections of the load connection elements.
Public/Granted literature
- US20080266812A1 Pressure-contact power semiconductor module and method for producing the same Public/Granted day:2008-10-30
Information query
IPC分类: