Invention Grant
- Patent Title: Miscut semipolar optoelectronic device
- Patent Title (中): Miscut半极光电子器件
-
Application No.: US13311986Application Date: 2011-12-06
-
Publication No.: US08368179B2Publication Date: 2013-02-05
- Inventor: John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
Public/Granted literature
- US20120074525A1 MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE Public/Granted day:2012-03-29
Information query
IPC分类:
