Invention Grant
US08368175B2 Capacitor, semiconductor device having the same, and method of producing them
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具有相同的电容器,半导体器件及其制造方法
- Patent Title: Capacitor, semiconductor device having the same, and method of producing them
- Patent Title (中): 具有相同的电容器,半导体器件及其制造方法
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Application No.: US12933946Application Date: 2009-03-27
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Publication No.: US08368175B2Publication Date: 2013-02-05
- Inventor: Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
- Applicant: Takashi Nakagawa , Kaoru Mori , Nobuyuki Ikarashi , Makiko Oshida
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2008-087118 20080328
- International Application: PCT/JP2009/056282 WO 20090327
- International Announcement: WO2009/119803 WO 20091001
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8242

Abstract:
Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1−x): x (0.01≦x≦0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure.
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