Dual bit line metal layers for non-volatile memory

Invention Grant

US08368137B2 Dual bit line metal layers for non-volatile memory 有权

Title translation: 用于非易失性存储器的双位线金属层

Please log in to see more content

Patent Title: Dual bit line metal layers for non-volatile memory
Patent Title (中): 用于非易失性存储器的双位线金属层
Application No.: US11768468

Application Date: 2007-06-26
Publication No.: US08368137B2

Publication Date: 2013-02-05
Inventor: Nima Mokhlesi , Jun Wan
Applicant: Nima Mokhlesi , Jun Wan
Applicant Address: US TX Plano
Assignee: SanDisk Technologies Inc.
Current Assignee: SanDisk Technologies Inc.
Current Assignee Address: US TX Plano
Agency: Vierra Magen Marcus & DeNiro LLP
Main IPC: H01L29/788
IPC: H01L29/788

Dual bit line metal layers for non-volatile memory

Abstract:

Structures and techniques are disclosed for reducing bit line to bit line capacitance in a non-volatile storage system. The bit lines are formed at a 4ƒpitch in each of two separate metal layers, and arranged to alternate between each of the layers. In an alternative embodiment, shields are formed between each of the bit lines on each metal layer.

Abstract(Chinese):

公开了用于在非易失性存储系统中减少位线到位线电容的结构和技术。位线在两个分离的金属层中的每一个中以4fpitch形成，并且布置成在每个层之间交替。在替代实施例中，在每个金属层上的每个位线之间形成屏蔽。

Public/Granted literature

US20090003025A1 DUAL BIT LINE METAL LAYERS FOR NON-VOLATILE MEMORY Public/Granted day:2009-01-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的