Invention Grant
- Patent Title: Semiconductor structure having an ELOG on a thermally and electrically conductive mask
- Patent Title (中): 在导电导热膜上具有ELOG的半导体结构
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Application No.: US13133370Application Date: 2008-12-16
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Publication No.: US08368118B2Publication Date: 2013-02-05
- Inventor: Shih-Yuan Wang , Lars Helge Thylen , Sagi Varghese Mathai
- Applicant: Shih-Yuan Wang , Lars Helge Thylen , Sagi Varghese Mathai
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2008/086991 WO 20081216
- International Announcement: WO2010/071633 WO 20100624
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/20
Abstract:
A semiconductor structure includes a substrate, a thermally and electrically conductive mask positioned upon the substrate, and an epitaxial lateral over growth (ELOG) material positioned upon the thermally and electrically conductive mask.
Public/Granted literature
- US20110241072A1 SEMICONDUCTOR STRUCTURE HAVING AN ELOG ON A THERMALLY AND ELECTRICALLY CONDUCTIVE MASK Public/Granted day:2011-10-06
Information query
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