Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
-
Application No.: US12153314Application Date: 2008-05-16
-
Publication No.: US08368098B2Publication Date: 2013-02-05
- Inventor: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant Address: JP Osaka-Shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-Shi
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-149422 20070605
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L21/329 ; H01S5/028
Abstract:
The present invention provides a light emitting device loaded with a light emitting semiconductor chip with a protective film formed on a light emitting portion, in which the protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, the first dielectric film is located more toward the light emitting portion than the second dielectric film, and the second dielectric film is located more toward the light emitting portion than the third dielectric film, and a manufacturing method of the light emitting device.
Public/Granted literature
- US20080303051A1 Light emitting device and manufacturing method thereof Public/Granted day:2008-12-11
Information query
IPC分类:
