Invention Grant
- Patent Title: Method for manufacturing semiconductor device, semiconductor device and electronic appliance
- Patent Title (中): 半导体器件，半导体器件和电子器件的制造方法
-
Application No.: US13282557Application Date: 2011-10-27
-
Publication No.: US08368082B2Publication Date: 2013-02-05
- Inventor: Tomokazu Yokoi , Yujiro Sakurada
- Applicant: Tomokazu Yokoi , Yujiro Sakurada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2007-305289 20071127
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.
Public/Granted literature
- US20120037903A1 Method For Manufacturing Semiconductor Device, Semiconductor Device And Electronic Appliance Public/Granted day:2012-02-16
Information query
IPC分类:
