Invention Grant
- Patent Title: Electrode design for plasma processing chamber
- Patent Title (中): 等离子体处理室的电极设计
-
Application No.: US12199932Application Date: 2008-08-28
-
Publication No.: US08367965B2Publication Date: 2013-02-05
- Inventor: Benson Chao , Chi-Hua Tseng
- Applicant: Benson Chao , Chi-Hua Tseng
- Applicant Address: TW Hsinchu
- Assignee: Hermes-Epitek Corp.
- Current Assignee: Hermes-Epitek Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: B23K10/00
- IPC: B23K10/00

Abstract:
An upper electrode for use in a plasma processing chamber is provided, which includes a center segment and a plurality of outer segments. The outer segments are attached to the center segment to adjust the area of the overall electrode. Gas distribution holes may be selectively formed on the center and outer segments, or both. By adding or removing the outer segments and stacking layers, the dimension of the electrode, the area of gas spurting region and the thickness of the provided upper electrode may be adjusted.
Public/Granted literature
- US20100051592A1 ELECTRODE DESIGN FOR PLASMA PROCESSING CHAMBER Public/Granted day:2010-03-04
Information query