Invention Grant
US08367566B2 Method for manufacturing semiconductor device and method for processing substrate
有权
用于制造半导体器件的方法和用于处理衬底的方法
- Patent Title: Method for manufacturing semiconductor device and method for processing substrate
- Patent Title (中): 用于制造半导体器件的方法和用于处理衬底的方法
-
Application No.: US13547935Application Date: 2012-07-12
-
Publication No.: US08367566B2Publication Date: 2013-02-05
- Inventor: Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
- Applicant: Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-096034 20070402; JP2008-57741 20080307
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; C23C16/455 ; C23C16/52 ; C23C16/06 ; C23C16/22
Abstract:
A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
Public/Granted literature
- US20120276751A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-11-01
Information query
IPC分类:
