Invention Grant
- Patent Title: Substrate processing apparatus and manufacturing method of semiconductor device
- Patent Title (中): 基板加工装置及半导体装置的制造方法
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Application No.: US12659999Application Date: 2010-03-26
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Publication No.: US08367530B2Publication Date: 2013-02-05
- Inventor: Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
- Applicant: Kiyohiko Maeda , Takeo Hanashima , Masanao Osanai
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-219677 20060811
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/42

Abstract:
A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.
Public/Granted literature
- US20100190355A1 Substrate processing apparatus and manufacturing method of semiconductor device Public/Granted day:2010-07-29
Information query
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