Invention Grant
- Patent Title: Method for preparing a semiconductor
- Patent Title (中): 半导体制备方法
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Application No.: US12281332Application Date: 2007-03-06
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Publication No.: US08367529B2Publication Date: 2013-02-05
- Inventor: Bruno Daudin , Henri Mariette
- Applicant: Bruno Daudin , Henri Mariette
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique (CNRS)
- Current Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique (CNRS)
- Current Assignee Address: FR Paris FR Paris
- Agency: Young & Thompson
- Priority: FR0602063 20060308
- International Application: PCT/FR2007/000397 WO 20070306
- International Announcement: WO2007/104848 WO 20070920
- Main IPC: H01L33/30
- IPC: H01L33/30
Abstract:
The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.
Public/Granted literature
- US20110089445A1 METHOD FOR PREPARING A SEMICONDUCTOR Public/Granted day:2011-04-21
Information query
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