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US08367524B2 Three-dimensional integrated circuit structure 有权
三维集成电路结构

  • Patent Title: Three-dimensional integrated circuit structure
  • Patent Title (中): 三维集成电路结构
  • Application No.: US12881961
    Application Date: 2010-09-14
  • Publication No.: US08367524B2
    Publication Date: 2013-02-05
  • Inventor: Sang-Yun Lee
  • Applicant: Sang-Yun Lee
  • Agent Greg L. Martinez
  • Main IPC: H01L21/00
  • IPC: H01L21/00 H01L21/331
Three-dimensional integrated circuit structure
Abstract:
A method of forming a semiconductor structure includes coupling a semiconductor structure to an interconnect region through a bonding region. The interconnect region includes a conductive line in communication with the bonding region. The bonding region includes a metal layer which covers the interconnect region. The semiconductor structure is processed to form a vertically oriented semiconductor device.
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