Invention Grant
- Patent Title: Method for the preparation of a multi-layered crystalline structure
- Patent Title (中): 制备多层晶体结构的方法
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Application No.: US12974772Application Date: 2010-12-21
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Publication No.: US08367519B2Publication Date: 2013-02-05
- Inventor: Dale A. Witte , Jeffrey L. Libbert
- Applicant: Dale A. Witte , Jeffrey L. Libbert
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/762
Abstract:
This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.
Public/Granted literature
- US20110159665A1 METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE Public/Granted day:2011-06-30
Information query
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