Invention Grant
US08367441B2 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
有权
氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件
- Patent Title: Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
- Patent Title (中): 氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件
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Application No.: US13200357Application Date: 2011-09-23
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Publication No.: US08367441B2Publication Date: 2013-02-05
- Inventor: Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant: Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-059695 20060306; JP2007-009282 20070118
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
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