Invention Grant
US08367284B2 Exposure device, exposure method, and method for manufacturing semiconductor device
有权
曝光装置,曝光方法以及制造半导体装置的方法
- Patent Title: Exposure device, exposure method, and method for manufacturing semiconductor device
- Patent Title (中): 曝光装置,曝光方法以及制造半导体装置的方法
-
Application No.: US12834443Application Date: 2010-07-12
-
Publication No.: US08367284B2Publication Date: 2013-02-05
- Inventor: Kyoichi Tsubata
- Applicant: Kyoichi Tsubata
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-194449 20090825
- Main IPC: G03F9/00
- IPC: G03F9/00

Abstract:
An exposure device includes a determining unit determines specific transfer patterns, which are transfer patterns of predetermined portions of a unit pattern, among transfer patterns projected through a photomask including an internal pattern having a plurality of unit patterns that is arranged at a predetermined interval and has the same shape, for two or more unit patterns, an error calculating unit calculates an error between the transfer pattern and the specified transfer pattern on the basis of the comparison between the relative position between the specific transfer patterns and a specified value of it, a correction parameter calculating unit calculates correction parameters for correcting the transfer patterns on the basis of the calculated error, and a correction control unit corrects exposure conditions using the correction parameters such that the transfer patterns are corrected.
Public/Granted literature
- US20110053060A1 EXPOSURE DEVICE, EXPOSURE METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-03-03
Information query