Invention Grant
US08366838B2 Moderate density, low density, and extremely low density single crystal alloys for high AN2 applications
有权
适用于高AN2应用的中等密度,低密度和极低密度单晶合金
- Patent Title: Moderate density, low density, and extremely low density single crystal alloys for high AN2 applications
- Patent Title (中): 适用于高AN2应用的中等密度,低密度和极低密度单晶合金
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Application No.: US12634008Application Date: 2009-12-09
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Publication No.: US08366838B2Publication Date: 2013-02-05
- Inventor: Venkatarama K. Seetharaman , Alan D. Cetel
- Applicant: Venkatarama K. Seetharaman , Alan D. Cetel
- Applicant Address: US CT Hartford
- Assignee: United Technologies Corporation
- Current Assignee: United Technologies Corporation
- Current Assignee Address: US CT Hartford
- Agency: Backman & LaPointe, P.C.
- Main IPC: C22C19/05
- IPC: C22C19/05

Abstract:
A single crystal alloy for high AN2 applications has a composition consisting essentially of from 4.0 to 10 wt % chromium, from 1.0 to 2.5 wt % molybdenum, up to 5.0 wt % tungsten, from 3.0 to 8.0 wt % tantalum, from 5.5 to 6.25 wt % aluminum, from 6.0 to 17 wt % cobalt, up to 0.2 wt % hafnium, from 4.0 to 6.0 wt % rhenium, from 1.0 to 3.0 wt % ruthenium, and the balance nickel. Further, these single crystal alloys have a total tungsten and molybdenum content in the range of from 1.0 to 7.5 wt %, preferably from 2.0 to 7.0 wt %, a total refractory element content in the range of from 9.0 to 24.5 wt %, preferably from 13 to 22 wt %, a ratio of rhenium to a total refractory element content in the range of from 0.16 to 0.67, preferably from 0.20 to 0.45, a density in the range of from 0.300 to 0.325 lb/in3, and a specific creep strength in the range from 106×103 to 124×103 inches. These alloys provide (a) increased creep strength for a given density and (b) specific creep strengths as high as or higher than all 2nd generation single crystal alloys with a significant decrease in density.
Public/Granted literature
- US20100086411A1 MODERATE DENSITY, LOW DENSITY, AND EXTREMELY LOW DENSITY SINGLE CRYSTAL ALLOYS FOR HIGH AN2 APPLICATIONS Public/Granted day:2010-04-08
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