Invention Grant
- Patent Title: Electrically programmable fuse module in semiconductor device
- Patent Title (中): 半导体器件中的电可编程保险丝模块
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Application No.: US13102061Application Date: 2011-05-06
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Publication No.: US08351291B2Publication Date: 2013-01-08
- Inventor: Lini Lee , Yen Hau Lee
- Applicant: Lini Lee , Yen Hau Lee
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc
- Current Assignee: Freescale Semiconductor, Inc
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
A semiconductor device has an e-fuse module and a programming current generator. The e-fuse module includes an array of electrically programmable e-fuse elements. The programming current generator has a set of reference transistor elements, a selector for actuating the reference transistor elements to generate a selected reference current, and a current mirror for applying a programming current that is a function of the selected reference current to a selected e-fuse element of the array to program the resistance of the e-fuse element.
Public/Granted literature
- US20120281450A1 ELECTRICALLY PROGRAMMABLE FUSE MODULE IN SEMICONDUCTOR DEVICE Public/Granted day:2012-11-08
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