Invention Grant
- Patent Title: Selective storage of additional inversion data or EDC data
- Patent Title (中): 选择性存储额外的反转数据或EDC数据
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Application No.: US12659685Application Date: 2010-03-17
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Publication No.: US08347179B2Publication Date: 2013-01-01
- Inventor: Yoshitaka Soma
- Applicant: Yoshitaka Soma
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-066977 20090318
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A data processing apparatus includes a non-volatile semiconductor memory configured to store a storage data and an additional data control circuit configured to generate an additional data and add the additional data to a main storage data, and the additional data is different between a first mode and a second mode. The additional data control circuit includes a first mode circuit configured to generate the additional data in the first mode; and a second mode circuit configured to generate the additional data in the second mode. The storage data contains a target data or an inversion data of the target data, as the main storage data and the additional data.
Public/Granted literature
- US20100241927A1 Apparatus and method for data processing Public/Granted day:2010-09-23
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