Invention Grant
US08286066B2 Non-volatile memory with bi-directional error correction protection
有权
具有双向纠错保护功能的非易失性存储器
- Patent Title: Non-volatile memory with bi-directional error correction protection
- Patent Title (中): 具有双向纠错保护功能的非易失性存储器
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Application No.: US12467965Application Date: 2009-05-18
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Publication No.: US08286066B2Publication Date: 2012-10-09
- Inventor: Christopher Bueb , Shaul Halabi
- Applicant: Christopher Bueb , Shaul Halabi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with bi-directional error correction protection. In some embodiments, multiple multi-level parity cells are used to represent parity values stored in codewords of an NVM device. Other embodiments may be described and claimed.
Public/Granted literature
- US20100293434A1 NON-VOLATILE MEMORY WITH BI-DIRECTIONAL ERROR CORRECTION PROTECTION Public/Granted day:2010-11-18
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