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US08286066B2 Non-volatile memory with bi-directional error correction protection 有权
具有双向纠错保护功能的非易失性存储器

Non-volatile memory with bi-directional error correction protection
Abstract:
Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with bi-directional error correction protection. In some embodiments, multiple multi-level parity cells are used to represent parity values stored in codewords of an NVM device. Other embodiments may be described and claimed.
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