A refresh control circuit for a semiconductor memory device includes a refresh controller configured to control the number of times a refresh signal is enabled during one refresh period in response to a refresh mode entering signal which indicates the start of a refresh mode, and a mode determination signal having refresh mode information, a refresh counter configured to output a row address for a refresh operation by counting the refresh signal in response to an active signal enabled in an active mode, and a row address decoder configured to decode the row address to generate a row address selection signal for sequentially accessing word lines within a cell array.