Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12912309Application Date: 2010-10-26
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Publication No.: US08284598B2Publication Date: 2012-10-09
- Inventor: Hiroyuki Takahashi , Naoki Ookuma
- Applicant: Hiroyuki Takahashi , Naoki Ookuma
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-246322 20091027
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor memory device includes: a memory cell array provided with a plurality of memory cells in a matrix; and a power supply circuit configured to supply an intermediate voltage between a power supply voltage and a ground voltage to each of the plurality of memory cells.
Public/Granted literature
- US20110096596A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-04-28
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