Invention Grant
- Patent Title: Internal voltage generation circuit and semiconductor apparatus using the same
- Patent Title (中): 内部电压产生电路及使用其的半导体装置
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Application No.: US12983148Application Date: 2010-12-31
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Publication No.: US08283971B2Publication Date: 2012-10-09
- Inventor: Yoon Jae Shin
- Applicant: Yoon Jae Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0095646 20100930
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
An internal voltage generation circuit includes a voltage detection unit configured to generate a voltage detection signal that indicates whether a voltage level of an internal voltage is a first target voltage level or a second target voltage level higher than the first target voltage level, according to control of a normal operation signal. The internal voltage generation circuit also includes an operation control signal generation unit configured to selectively activate an operation control signal in response to the normal operation signal and the voltage detection signal, a periodic pulse signal generation unit configured to generate a periodic pulse signal in response to the operation control signal and the normal operation signal, and a charge pumping unit configured to generate an internal voltage by performing a charge pumping operation according to control of the periodic pulse signal.
Public/Granted literature
- US20120081175A1 INTERNAL VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR APPARATUS USING THE SAME Public/Granted day:2012-04-05
Information query
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