Invention Grant
- Patent Title: Gate control circuit
- Patent Title (中): 门控电路
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Application No.: US13189397Application Date: 2011-07-22
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Publication No.: US08283953B2Publication Date: 2012-10-09
- Inventor: Thomas D. Brumett, Jr. , Marcelo Martinez , John Othniel McDonald
- Applicant: Thomas D. Brumett, Jr. , Marcelo Martinez , John Othniel McDonald
- Applicant Address: US CA Santa Clara
- Assignee: Silego Technology, Inc.
- Current Assignee: Silego Technology, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.
Public/Granted literature
- US20120019287A1 GATE CONTROL CIRCUIT Public/Granted day:2012-01-26
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