A nonvolatile memory device includes an array of rows and columns of memory cells and a plurality of word lines and bit lines associated with the memory cells. The memory device further includes a word line booster circuit coupled with the word lines for supplying a selected word line with a specific voltage as a drive voltage during an operation of the memory device. The word line booster circuit includes a first boosting capacitor and a second boosting capacitor connected in parallel to generate a boosting voltage and a first precharge circuit for precharging the first and second boosting capacitors. The word line booster circuit further includes a third boosting capacitor operatively connected to the first and second boosting capacitors via a charge-sharing transistor, the third boosting capacitor being connected to one end of a load resistor to generate an output signal at the other end of the load resistor when the charge sharing transistor is enabled.