Invention Grant
- Patent Title: Phase-change memory temperature sensitive detector
- Patent Title (中): 相变存储器温度敏感检测器
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Application No.: US12464011Application Date: 2009-05-11
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Publication No.: US08259488B1Publication Date: 2012-09-04
- Inventor: Kerry Dean Tedrow , Jahanshir Javanifard
- Applicant: Kerry Dean Tedrow , Jahanshir Javanifard
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A Phase-Change Memory (PCM) having a temperature detector with a dedicated PCM bit programmed to an amorphous state and a circuit to determine that the dedicated PCM bit is no longer in the amorphous state. A temperature exposure signal is asserted to indicate that a high temperature has altered PCM device programming integrity.
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