Invention Grant
US08259464B2 Wafer level package (WLP) device having bump assemblies including a barrier metal
有权
具有包括阻挡金属的凸块组件的晶片级封装（WLP）器件
- Patent Title: Wafer level package (WLP) device having bump assemblies including a barrier metal
- Patent Title (中): 具有包括阻挡金属的凸块组件的晶片级封装（WLP）器件
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Application No.: US12822326Application Date: 2010-06-24
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Publication No.: US08259464B2Publication Date: 2012-09-04
- Inventor: Tiao Zhou , Arkadii V. Samoilov
- Applicant: Tiao Zhou , Arkadii V. Samoilov
- Applicant Address: US CA San Jose
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Advent IP, P.C., L.L.O.
- Main IPC: H05K7/12
- IPC: H05K7/12 ; H01L21/44
Abstract:
WLP semiconductor devices include bump assemblies that have a barrier layer for inhibiting electromigration within the bump assemblies. In an implementation, the bump assemblies include copper posts formed on the integrated circuit chips of the WLP devices. Barrier layers formed of a metal such as nickel (Ni) are provided on the outer surface of the copper posts to inhibit electromigration in the bump assembly. Oxidation prevention caps formed of a metal such as tin (Sn) are provided over the barrier layer. Solder bumps are formed over the oxidation prevention caps. The oxidation prevention caps inhibit oxidation of the barrier layer during fabrication of the bump assemblies.
Public/Granted literature
- US20110317385A1 WAFER LEVEL PACKAGE (WLP) DEVICE HAVING BUMP ASSEMBLIES INCLUDING A BARRIER METAL Public/Granted day:2011-12-29
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